Proceedings Paper 2021 · 1 citations

Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes

Taser, A., Orhan, Z., Aykac, C., Ozakin, O., Guzeldir, B., Saglam, M.

Abstract

In this study, it is aimed to produce Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes and to calculate the diode parameters such as ideality factor, barrier height and series resistance by using timedependent current-voltage (I-V) measurements. First, pure Ti metal was evaporated on the matt surface of the n-Si semiconductors and annealed at 420 degrees C in nitrogen atmosphere. Secondly, Au and Cu metals and AuCu alloy were evaporated on the other surface of n-Si semiconductors. So, Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes were obtained. Finally, I-V measurements of the Schottky diodes were taken at specified time intervals (immediately,1, 7, 15, 30, 90, 180 and 365 days) and time-dependent diode parameters were calculated using the Thermionic Emission, Cheung and Norde methods. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.

Keywords

Au-Cu alloys Schottky diodes Effects of Aging Cheung and Norde method

WoS Categories

Materials Science, Multidisciplinary

Citation

Journal: MATERIALS TODAY-PROCEEDINGS
Year: 2021
Volume: 46
Pages: 6954-6959
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2021.03.270
WoS UID: WOS:000685935700017

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