Saglam, M.

Study of how illumination affects the electrical properties of Al/n-gap Schottky diodes with varying amounts of Cu NCs-doped wm-cqd interlayer

Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions

Microstructural properties of<i> SiC</i> thin film deposited by<i> RF</i> sputtering technique and its role on the barrier parameters of<i> n-InP/Pd</i> and<i> n-GaP/Pd</i> junctions as an interlayer

Transfer of graphene thin film obtained by PECVD method to <i>Au/p-Si</i> rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes

Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on <i>Au/Au-RGO/p-Si/Al</i> Structure Depending on Sample Temperature

Interpretation of the I-V, C-V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature