Article 2023 · 18 atıf

Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based <i>n</i>-Si Schottky Diodes over a Wide Measuring Temperature Range

Efeoglu, Hasan, Turut, Abdulmecit, Gul, Melik

Özet

We have compared the I-V-T characteristics of the metal-based Pt/n-Si and silicide-based PtSi/n-Si Schottky barrier (SB) diodes in the temperature range of 40-320 K. The results revealed that the silicide-based diode (6.00 omega at 40 K to 6.50 omega at 320 K) has lower series resistance R-s values than those of the metal-based diode (7.10 omega at 40 K to 8.50 omega at 320 K). Again, the SB height values of 0.806 eV and 0.875 eV for the metal-based and silicide-based SB diodes, respectively, have been obtained at 300 K, which are consistent with the values in the literature. The lower R-s and higher SB height obtained for the silicide-based PtSi/n-Si diode is a clear evidence for the use of the metal silicide instead of metal for the device performance and reliability in Si technology. Furthermore, the I-V curves of the silicide-based diode have shown a double slope separated by a transition segment at temperatures below 170 K.

Anahtar Kelimeler

Schottky barrier diodes metal-based Schottky contact silicide-based PtSi Schottky contact temperature-dependent I-V characteristics Schottky barrier height BARRIER HEIGHT ELECTRICAL CHARACTERISTICS CAPACITANCE-VOLTAGE THERMAL-STABILITY DEPENDENCE TRANSPORT CONTACTS INHOMOGENEITY INTERFACES GAAS

WoS Kategorileri

Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied

Künye

Dergi: JOURNAL OF ELECTRONIC MATERIALS
Yıl: 2023
Cilt: 52
Sayı: 2
Sayfa: 1410-1418
ISSN: 0361-5235
eISSN: 1543-186X
DOI: 10.1007/s11664-022-10062-6
WoS UID: WOS:000895654400004

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