EH
Efeoglu, Hasan
21 yayın · 151 atıf · 2021–2025
Yayın
21
Atıf
151
Yıllar
4
Yayınlar
| Başlık | Yıl | Tip | Atıf |
|---|---|---|---|
|
Temperature-Dependent <i>I</i>-<i>V</i> Characteristics of Schottky Diodes: A Comprehensive Review of Barrier Height, Ideality Factor, and Series Resistance
|
2025 | Review | 0 |
|
Characterization of Ta<sub>x</sub>O<sub>5-y</sub> thin films grown by HiPIMS reactive sputtering for temperature sensing applications
|
2025 | Article | 0 |
|
Influence of nitrogen concentration on the temperature sensing and resistor properties of TaN thin films at cryogenic temperatures
|
2025 | Article | 0 |
|
Room temperature current conduction mechanisms in Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> and Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub>/TiO<sub>2</sub> multilayer memristor structures
|
2025 | Article | 1 |
|
Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
|
2025 | Article | 4 |
|
Investigation of the memristive properties of the device form and thin film form of BST and CeO<sub>2</sub> films with different arrays
|
2025 | Article | 0 |
|
Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes
|
2025 | Article | 4 |
|
Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based <i>n</i>-Si Schottky Diodes over a Wide Measuring Temperature Range
|
2023 | Article | 18 |
|
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
|
2023 | Article | 14 |
|
Thermal sensing capability and current-voltage-temperature characteristics in Pt/<i>n</i>-GaP/Al/Ti Schottky diodes
|
2023 | Article | 15 |
|
Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range
|
2022 | Article | 3 |
|
Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy<i> n</i>-Si/<i>n</i><SUP>+</SUP>Si structures as a function of Schottky contact area
|
2022 | Article | 11 |
|
Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/<i>n</i>-Si/Au-Sb/Ni rectifying contacts
|
2022 | Article | 8 |
|
Formation of a Ti → TiO<sub>2</sub>-graded layer and its effect on the memristive properties of TiO<sub><i>x</i></sub>(/Ti/TiO<sub><i>x</i></sub>) structures
|
2022 | Article | 4 |
|
A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness
|
2022 | Article | 15 |
|
Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/<i>n</i>-GaAs Schottky contacts
|
2021 | Article | 20 |
|
Memristiv effect on W/Ti/p-Si structure: Aging phenomena and one of the origin of barrier inhomogeneity
|
2021 | Proceedings Paper | 0 |
|
Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures
|
2021 | Proceedings Paper | 0 |
|
Effect of the Al<sub>2</sub>O<sub>3</sub> interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al<sub>2</sub>O<sub>3</sub>/<i>n</i>-GaAs structures
|
2021 | Article | 13 |
|
AN APPLICATION OF R-HiPIMS METHOD FOR TiO<sub>2</sub>- AND TiO<sub>2</sub>:Cu-BASED MEMRISTORS: CONTROLLING Cu DOPING USING DC PULSE METHOD
|
2021 | Article | 0 |
|
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
|
2021 | Article | 21 |