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TA

Turut, Abdulmecit

17 yayın · 213 atıf · 2021–2025

Yayın
17
Atıf
213
Yıllar
5
Yayınlar
Başlık Yıl Tip Atıf
Temperature-dependent characteristics of Tantalum and Tantalum nitride based<i> p</i>-Si structures
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2025 Article 4
Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2025 Article 4
Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes
JOURNAL OF ELECTRONIC MATERIALS
2025 Article 4
Self-driven, stable broadband photodetector based on GaAs:CdS heterojunction with ultrahigh on/off ratio and detectivity
SURFACES AND INTERFACES
2024 Article 15
Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction
NANOTECHNOLOGY
2024 Article 6
Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based <i>n</i>-Si Schottky Diodes over a Wide Measuring Temperature Range
JOURNAL OF ELECTRONIC MATERIALS
2023 Article 18
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
OPTICAL MATERIALS
2023 Article 14
Thermal sensing capability and current-voltage-temperature characteristics in Pt/<i>n</i>-GaP/Al/Ti Schottky diodes
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2023 Article 15
Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range
SILICON
2022 Article 3
Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy<i> n</i>-Si/<i>n</i><SUP>+</SUP>Si structures as a function of Schottky contact area
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2022 Article 11
Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/<i>n</i>-Si/Au-Sb/Ni rectifying contacts
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2022 Article 8
Discrepancies in barrier heights obtained from current-voltage (<i>IV</i>) and capacitance-voltage (<i>CV</i>) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2022 Article 42
A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness
JOURNAL OF PHYSICS D-APPLIED PHYSICS
2022 Article 15
Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/<i>n</i>-GaAs Schottky contacts
TURKISH JOURNAL OF PHYSICS
2021 Article 20
2nd international congress on semiconductor materials and devices
MATERIALS TODAY-PROCEEDINGS
2021 Proceedings Paper 0
Effect of the Al<sub>2</sub>O<sub>3</sub> interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al<sub>2</sub>O<sub>3</sub>/<i>n</i>-GaAs structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2021 Article 13
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
JOURNAL OF MOLECULAR STRUCTURE
2021 Article 21