TA
Turut, Abdulmecit
17 yayın · 213 atıf · 2021–2025
Yayın
17
Atıf
213
Yıllar
5
Yayınlar
| Başlık | Yıl | Tip | Atıf |
|---|---|---|---|
|
Temperature-dependent characteristics of Tantalum and Tantalum nitride based<i> p</i>-Si structures
|
2025 | Article | 4 |
|
Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
|
2025 | Article | 4 |
|
Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes
|
2025 | Article | 4 |
|
Self-driven, stable broadband photodetector based on GaAs:CdS heterojunction with ultrahigh on/off ratio and detectivity
|
2024 | Article | 15 |
|
Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction
|
2024 | Article | 6 |
|
Current-Voltage Characteristics of Pt Metal-based and PtSi Silicide-based <i>n</i>-Si Schottky Diodes over a Wide Measuring Temperature Range
|
2023 | Article | 18 |
|
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
|
2023 | Article | 14 |
|
Thermal sensing capability and current-voltage-temperature characteristics in Pt/<i>n</i>-GaP/Al/Ti Schottky diodes
|
2023 | Article | 15 |
|
Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range
|
2022 | Article | 3 |
|
Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy<i> n</i>-Si/<i>n</i><SUP>+</SUP>Si structures as a function of Schottky contact area
|
2022 | Article | 11 |
|
Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/<i>n</i>-Si/Au-Sb/Ni rectifying contacts
|
2022 | Article | 8 |
|
Discrepancies in barrier heights obtained from current-voltage (<i>IV</i>) and capacitance-voltage (<i>CV</i>) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature
|
2022 | Article | 42 |
|
A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness
|
2022 | Article | 15 |
|
Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/<i>n</i>-GaAs Schottky contacts
|
2021 | Article | 20 |
|
2nd international congress on semiconductor materials and devices
|
2021 | Proceedings Paper | 0 |
|
Effect of the Al<sub>2</sub>O<sub>3</sub> interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al<sub>2</sub>O<sub>3</sub>/<i>n</i>-GaAs structures
|
2021 | Article | 13 |
|
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
|
2021 | Article | 21 |