A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers

Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons (N-t) and the output power (P (out)-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results.

Dergi

LASER PHYSICS

Yıl

2021

Cilt

31

Sayı

11

ISSN

1054-660X

eISSN

1555-6611

DOI

10.1088/1555-6611/ac3013

WoS UID

WOS:000711659900001