Article
2021
·
1 citations
A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers
Abstract
Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons (N-t) and the output power (P (out)-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results.
Keywords
rate equations
semiconductor laser
transient and steady characteristics
InGaAs
GaAs and AlGaInAs
InP lasers
WoS Categories
Optics
Physics, Applied
Citation
- Journal
- LASER PHYSICS
- Year
- 2021
- Volume
- 31
- Issue
- 11
- ISSN
- 1054-660X
- eISSN
- 1555-6611
- DOI
- 10.1088/1555-6611/ac3013
- WoS UID
- WOS:000711659900001