Electrical investigation of Al/PEDOT/C/p-Si structure
Özet
In this investigation, Al/PEDOT/C/p-Si structure has been fabricated by synthesizing PEDOT/C composites on the p-Si substrate. The thickness and surface morphology of PEDOT/C on p-Si have been investigated by using the scanning electron microscope. The optical characterization of PEDOT/C solution indicated a strong optical absorbance peak located at 267 nm. The electrical characterization of Al/PEDOT/C/p-Si structure was made under dark and illumination conditions at the room temperature. The ideality factor, and barrier height were identified to be 1.28, 1.12 and 0.80 eV, 0.83 eV from current-voltage (I-V) measurements for dark and illuminated conditions, respectively. The results show that the Al/PEDOT/C/p-Si structure may be utilized to be a photodiode in optoelectronic implementations.
Anahtar kelimeler
Atıf için künye
Kaya, F. S., Öznülüer Özer, T., Turgut, G., Bayrakçeken, A., & Duman, S. (2019). Electrical investigation of Al/PEDOT/C/p-Si structure. RESULTS IN PHYSICS, 13. https://doi.org/10.1016/j.rinp.2019.102316
BibTeX
@article{kaya2019-66925,
author = {Kaya, Fikriye Seyma and Öznülüer Özer, Tuba and Turgut, Guven and Bayrakçeken, Ayşe and Duman, Songul},
title = {Electrical investigation of Al/PEDOT/C/p-Si structure},
journal = {RESULTS IN PHYSICS},
year = {2019},
volume = {13},
issn = {2211-3797},
doi = {10.1016/j.rinp.2019.102316},
url = {https://akademik.atauni.edu.tr/yayinlar/66925-electrical-investigation-of-alpedotcp-si-structure}
}