Bildiri
Tam Metin Bildiri
Uluslararası
2016
Structural Characterization of InSe:Zn Layer Semiconductor Grown by Bridgman/Stockbarger Technique
IPCAP 2016, International Physics Conference at the Anatolian Peak, 02-PP03 S:164, 25-27 February/2016 Erzurum/Türkiye.
25.02.2016–27.02.2016 · 25.02.2016
Atıf için künye
Gürbulak, B., Ashkhasi, A., ŞATA, M., Özçelik, F. Ş., & DUMAN, S. (2016). Structural Characterization of InSe:Zn Layer Semiconductor Grown by Bridgman/Stockbarger Technique. IPCAP 2016, International Physics Conference at the Anatolian Peak, 02-PP03 S:164, 25-27 February/2016 Erzurum/Türkiye.
BibTeX
@inproceedings{gurbulak2016-65504,
author = {Gürbulak, Bekir and Ashkhasi, Afsoun and ŞATA, MEHMET and Özçelik, F Ş and DUMAN, SONGÜL},
title = {Structural Characterization of InSe:Zn Layer Semiconductor Grown by Bridgman/Stockbarger Technique},
booktitle = {IPCAP 2016, International Physics Conference at the Anatolian Peak, 02-PP03 S:164, 25-27 February/2016 Erzurum/Türkiye.},
year = {2016},
url = {https://akademik.atauni.edu.tr/yayinlar/65504-structural-characterization-of-insezn-layer-semiconductor-grown-by}
}