Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique

Gürbulak, Bekir; ŞATA, Mehmet; Dogan, Seydi; Duman, Songül; ASHKHASİ, Afsoun; Keskenler, E. Fahri

doi:10.1016/j.physe.2014.07.002

Makale Tam Makale Uluslararası 2014

Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique

Bekir Gürbulak, Mehmet ŞATA, Seydi Dogan, Songül Duman, Afsoun ASHKHASİ, E. Fahri Keskenler

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Cilt 64 · ss. 106–111 · 01.11.2014

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Özet

Undoped InSe and Ag doped InSe (InSe:Ag) single crystals have been grown by using the Bridgman/Stockbarger method. The freshly cleaved crystals have mirror-like surfaces even without using mechanical treatment. The structure and lattice parameters of the undoped InSe and InSe:Ag semiconductors have been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that the InSe and InSe:Ag crystals had hexagonal structure, and calculated lattice constants were found to be a=4.002 angstrom and c=17.160 angstrom for InSe and a=4.619 angstrom and c=17.003 angstrom for InSe:Ag. The crystallite sizes have been calculated to be 40-150 nm for InSe and 75-120 nm for InSe:Ag from the SEM results. Ag doping causes a significant increase in the XRD peak intensity. It has been observed from EDX results that InSe contains In=57.12%, Se=38.08% and O=4.81%, respectively. Absorption measurements have been carried out in InSe and InSe:Ag samples in the temperature range 10-320 K with a step of 10 K. The first exciton energies for n=1 were calculated as 1.328, 1.260 eV in InSe and were 1.340, 1.282 eV in InSe:Ag at 10 K and 320 K, respectively. (C) 2014 Elsevier B.V. All rights reserved.

Anahtar kelimeler

ABSORPTION TEMPERATURE-DEPENDENCE PHASE SINGLE-CRYSTALS INSE indium selenide Substrate temperature GAP InSe:Ag First exciton energy Structural analysis ELECTRIC-FIELD INFLUENCE CHEMICAL-VAPOR-DEPOSITION INXSEY FILMS URBACH TAIL

Atıf için künye

Gürbulak, B., ŞATA, M., Dogan, S., Duman, S., ASHKHASİ, A., & Keskenler, E. F. (2014). Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 64, 106–111. https://doi.org/10.1016/j.physe.2014.07.002

BibTeX

@article{gurbulak2014-65478,
  author = {Gürbulak, Bekir and ŞATA, Mehmet and Dogan, Seydi and Duman, Songül and ASHKHASİ, Afsoun and Keskenler, E. Fahri},
  title = {Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique},
  journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES},
  year = {2014},
  volume = {64},
  pages = {106--111},
  issn = {1386-9477},
  doi = {10.1016/j.physe.2014.07.002},
  url = {https://akademik.atauni.edu.tr/yayinlar/65478-structural-characterizations-and-optical-properties-of-inse-and-inseag}
}