Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes

Duman, S.; Gürbulak, Bekir; Dogan, S.; Turut, A.

doi:10.1016/j.mee.2008.10.004

Makale Tam Makale Uluslararası 2009

Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes

S. Duman, Bekir Gürbulak, S. Dogan, A. Turut

MICROELECTRONIC ENGINEERING Cilt 86 · Sayı 1 · ss. 106–110 · 01.01.2009

DOI ile aç

Özet

We have identically prepared Au-Be/p-InSe:Cd Schottky barrier diodes (SBDs) (21 dots) on the InSe:Cd substrate. The electrical analysis of Au-Be/p-InSe:Cd structure has been investigated by means of cutrent-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements at 296 K temperature in dark conditions. The effective barrier heights and ideality factors of identically fabricated Au-Be/p-InSe:Cd SBDs have been calculated from their experimental forward bias current-voltage (I-V) characteristics by applying a thermionic emission theory. The BH values obtained from the I-V characteristics have varied between 0.74 eV and 0.82 eV with values of ideality factors ranging between 1.49 and 1.11 for the Au-Be/p-InSe:Cd SBDs. It has been determined a lateral homogeneous barrier height value of approximately 0.82 eV for these structures from the experimental linear relationship between barrier heights and ideality factors. The Schottky barrier height (SBH) value has been obtained from the reverse-bias C-V characteristics of Au-Be/p-InSe:Cd SBD for only one diode. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I-V measurements using Cheung's and Norde's methods. (C) 2008 Elsevier B.V. All rights reserved.

Anahtar kelimeler

HEIGHT SURFACES PARAMETERS TRANSPORT CURRENT-VOLTAGE CHARACTERISTICS CONTACTS BARRIER HEIGHT PHOTOVOLTAIC PROPERTIES SERIES RESISTANCE Ideality factor CAPACITANCE-VOLTAGE CHARACTERISTICS INTERFACES SOLAR-CELLS Schottky contact HIGH SERIES RESISTANCE InSe:Cd IV PLOT

Atıf için künye

Duman, S., Gürbulak, B., Dogan, S., & Turut, A. (2009). Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes. MICROELECTRONIC ENGINEERING, 86(1), 106–110. https://doi.org/10.1016/j.mee.2008.10.004

BibTeX

@article{duman2009-65468,
  author = {Duman, S. and Gürbulak, Bekir and Dogan, S. and Turut, A.},
  title = {Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes},
  journal = {MICROELECTRONIC ENGINEERING},
  year = {2009},
  volume = {86},
  number = {1},
  pages = {106--110},
  issn = {0167-9317},
  doi = {10.1016/j.mee.2008.10.004},
  url = {https://akademik.atauni.edu.tr/yayinlar/65468-electrical-characteristics-and-inhomogeneous-barrier-analysis-of-au-bep-insecd}
}