The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
Özet
We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O-2, N-2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.
Atıf için künye
POLİTANO, A., Chiarello, G., SAMNAKAY, R., LİU, G., Gürbulak, B., Duman, S., Balandin, A. A., & Boukhvalov, D. W. (2016). The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. NANOSCALE, 8(16), 8474–8479. https://doi.org/10.1039/c6nr01262k
BibTeX
@article{politano2016-65463,
author = {POLİTANO, AA and Chiarello, G. and SAMNAKAY, RAO and LİU, GSA and Gürbulak, Bekir and Duman, S. and Balandin, A. A. and Boukhvalov, D. W.},
title = {The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices},
journal = {NANOSCALE},
year = {2016},
volume = {8},
number = {16},
pages = {8474--8479},
issn = {2040-3364},
doi = {10.1039/c6nr01262k},
url = {https://akademik.atauni.edu.tr/yayinlar/65463-the-influence-of-chemical-reactivity-of-surface-defects-on-ambient-stable-inse}
}