Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique
Özet
Pure and lutetium (Lu) incorporated zinc oxide (ZnO) thin films were deposited by a sol-gel route. The effect of Lu contribution on the properties of ZnO was examined in detail by means of XRD, AFM, SEM, UV-Vis spectrophotometer, and I-V measurements. The nano-sized ZnO:Lu samples had hexagonal wurtzite structure with c-axis (002) preferential orientation. The pure ZnO nano-particles homogeneously scattered on the film surface and this homogeneous particle distribution was deteriorated with Lu incorporation. Ohmic contacts to the ZnO:Lu films were formed using gold (Au) metallization schemes. As-deposited Au contacts exhibited linear current-voltage characteristics. The optical band gap for pure ZnO went up from 3.281 to 3.303 eV with low Lu contribution level up to 3 at.%, then it decreased with more Lu level. The Urbach energy was also studied and it was found that E-u depended on Lu incorporation level.
Atıf için künye
Turgut, G., Duman, S., Ozcelik, F. S., Gürbulak, B., & Dogan, S. (2016). Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique. Journal of Materials Science: Materials in Electronics, 27(5), 5089–5098. https://doi.org/10.1007/s10854-016-4399-3
BibTeX
@article{turgut2016-65458,
author = {Turgut, G. and Duman, S. and Ozcelik, F. S. and Gürbulak, Bekir and Dogan, S.},
title = {Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique},
journal = {Journal of Materials Science: Materials in Electronics},
year = {2016},
volume = {27},
number = {5},
pages = {5089--5098},
issn = {0957-4522},
doi = {10.1007/s10854-016-4399-3},
url = {https://akademik.atauni.edu.tr/yayinlar/65458-lutentium-incorporation-influence-on-zno-thin-films-coated-via-a-sol-gel-route}
}