Metal/p-InSe: Mn Schottky barrier diodes
Özet
In this study, we have reported a study of a number of metal/p-type InSe:Mn (Al, Au, Au-Be, Au-Ge, Au-Zn, Cd, Co, Mn, Sb, Sn and Zn) Schottky barrier diodes (SBDs). The barrier height (BH) and ideality factor (n) values for the metal/p-InSe:Mn SBDs have been obtained from their I V characteristics at the room temperature. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I V measurements using Cheung's functions.
Anahtar kelimeler
Atıf için künye
Duman, S., Elkoca, Z., Gürbulak, B., Tekle, T. B., & Dogan, S. (2012). Metal/p-InSe: Mn Schottky barrier diodes. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 14, 693–698. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84867488392&origin=inward
BibTeX
@article{duman2012-65448,
author = {Duman, S. and Elkoca, Z. and Gürbulak, Bekir and Tekle, T. Bahtiyari and Dogan, S.},
title = {Metal/p-InSe: Mn Schottky barrier diodes},
journal = {JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
year = {2012},
volume = {14},
pages = {693--698},
issn = {1454-4164},
url = {https://akademik.atauni.edu.tr/yayinlar/65448-metalp-inse-mn-schottky-barrier-diodes}
}