Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2
Özet
Undoped p-TlGaSe2 and Dy-doped p-TlGaSe2 (p-TlGaSe2:Dy) single crystals were grown by the Bridgman-Stockbarger method. Absorption spectra were measured on freshly cleaved (001) surfaces. The freshly cleaved crystals had a mirror-like surface and there was no need for mechanical treatment. The absorption measurements were carried out in p-TlGaSe2 and p-TlGaSe2:Dy samples in the temperature range 10-320 K with a step of 10 K. The phonon energies calculated in p-TlGaSe2 and p-TlGaSe2:Dy are 23.0 meV and 21.0 meV, respectively. The direct band gaps of p-TlGaSe2 and p-TlGaSe2:Dy are 2.279 eV and 2.294 eV at 10 K, respectively. There is an abrupt change for the energy peak for p-TlGaSe2 in the temperature ranges 105-120 K, 240-250 K, and for p-TlGaSe2:Dy in the temperature ranges 100-110 K, 240-260 K.
Atıf için künye
Gürbulak, B. (1999). Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 68(3), 353–356. https://doi.org/10.1007/s003390050902
BibTeX
@article{gurbulak1999-65437,
author = {Gürbulak, Bekir},
title = {Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2},
journal = {APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING},
year = {1999},
volume = {68},
number = {3},
pages = {353--356},
issn = {0947-8396},
doi = {10.1007/s003390050902},
url = {https://akademik.atauni.edu.tr/yayinlar/65437-growth-and-absorption-properties-of-dy-doped-and-undoped-p-type-tlgase2}
}