Laterally inhomogeneous barrier analysis of cu n gap al schottky devices
Özet
In this study, we examined the electrical parameters of Cu/n-GaP/Al Schottky structures at room temperature and examined the electrical characterization of these devices depending on and Capacitance-Voltage (C-V) and Current-Voltage (I-V) measurements. A statistical study on the experimental ideality factor (n) and BHs(barrier heights) values of the devices was stated. The n and BHs of all contacts have been determined from the electrical characteristics. Even though all of the diodes were conformably prepared, there was a diode-to-diode variation: the effective BHs changed from 0.988-0.07 to 1.216-0.07 eV, and the n from 1.01-0.299 to 2.16-0.299. The yielded results show that the mean electrical parameters of Schottky devices are different from one diode to another, even if they are identically prepared.It can be axplained that the lower BHs usher with the higher n values owing to inhomogeneities.
Atıf için künye
Çınar Demir, K., COŞKUN, C., KURUDİREK, S. V., ÖZ, S., Aydoğan, Ş., & BİBER, M. (2016). Laterally inhomogeneous barrier analysis of cu n gap al schottky devices. IPCAP 2016. https://doi.org/10.1088/1742-6596/707/1/012023
BibTeX
@inproceedings{cinardemir2016-65016,
author = {Çınar Demir, Kübra and COŞKUN, CEVDET and KURUDİREK, SİNEM VAHİDE and ÖZ, SERHAT and Aydoğan, Şakir and BİBER, MEHMET},
title = {Laterally inhomogeneous barrier analysis of cu n gap al schottky devices},
booktitle = {IPCAP 2016},
year = {2016},
doi = {10.1088/1742-6596/707/1/012023},
url = {https://akademik.atauni.edu.tr/yayinlar/65016-laterally-inhomogeneous-barrier-analysis-of-cu-n-gap-al-schottky-devices}
}