The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction
Özet
A poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40-300 K range. The temperature dependence of the main parameters, namely, the barrier height (Phi(b)), ideality factor (eta), reverse current (I 0) and series resistance (R-s), were investigated. It was seen that the Phi(b) and the I-0 values of the device increased with increasing temperature, while the eta and the R-s values decreased. The temperature dependences of the Phi(b) and the eta were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I-0/T-2) vs. 1/eta(T) plot, the values of the activation energy (E-a) and Richardson constant (A*) were calculated as 0.324 eV and 2.84 x 10(-7) A cm(-2)K(-2), respectively. The experimental value of the R-s from the forward current-voltage plots decreased with an increase in the temperature.
Anahtar kelimeler
Atıf için künye
Demir, H. O., Çaldıran, Z., Meral, K., Şahin, Y., Acar, M., & Aydoğan, Ş. (2016). The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction. E-POLYMERS, 16, 75–82. https://doi.org/10.1515/epoly-2015-0170
BibTeX
@article{demir2016-64980,
author = {Demir, Haci Okkes and Çaldıran, Zakir and Meral, Kadem and Şahin, Yılmaz and Acar, Murat and Aydoğan, Şakir},
title = {The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction},
journal = {E-POLYMERS},
year = {2016},
volume = {16},
pages = {75--82},
issn = {1618-7229},
doi = {10.1515/epoly-2015-0170},
url = {https://akademik.atauni.edu.tr/yayinlar/64980-the-effect-of-temperature-on-the-electrical-characterization-of-a-polyphenoxy}
}