On the studies of capacitance-voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range
Özet
The purpose of this work is to fabricate a Ni/GO-Fe3O4/n-Si heterojunction device using Mott-Schottky plots and to study the capacitance-voltage/conductance/series resistance characteristics of the device as a function of temperature. We analyzed temperature dependent capacitance-voltage measurements for the Ni/GO-Fe3O4/n-Si device in the temperature range from 80 to 360 K. Temperature dependent electrical measurements have been performed at a fixed frequency of 500 kHz and frequency dependent ones have been carried out at room temperature. In the reverse bias capacitance-voltage characteristics figure, it has been determined that the barrier height is 1.73 eV (80 K) and 1.50 eV (360 K) with 20 K steps. The impedance analysis measurements have been performed in the reverse and forward biases. The experimental results have shown that the values of capacitance, conductance, interface states and series resistanceR(s)depend on both bias voltage and temperature.
Anahtar kelimeler
Atıf için künye
Gumus, I., & Aydoğan, Ş. (2020). On the studies of capacitance-voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35(10). https://doi.org/10.1088/1361-6641/aba419
BibTeX
@article{gumus2020-64969,
author = {Gumus, Ilknur and Aydoğan, Şakir},
title = {On the studies of capacitance-voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = {2020},
volume = {35},
number = {10},
issn = {0268-1242},
doi = {10.1088/1361-6641/aba419},
url = {https://akademik.atauni.edu.tr/yayinlar/64969-on-the-studies-of-capacitance-voltage-and-impedance-spectroscopy-of-an-nigo}
}