Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation
Özet
We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I-V (current-voltage) and C-V (capacitance-voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 x 10(10) e(-) cm(-2)) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I-V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C-V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.
Anahtar kelimeler
Atıf için künye
Çınar Demir, K., Aydoğan, Ş., & Coskun, C. (2014). Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 300(3), 1113–1120. https://doi.org/10.1007/s10967-013-2908-x
BibTeX
@article{cinardemir2014-64944,
author = {Çınar Demir, Kübra and Aydoğan, Şakir and Coskun, C.},
title = {Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation},
journal = {JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY},
year = {2014},
volume = {300},
number = {3},
pages = {1113--1120},
issn = {0236-5731},
doi = {10.1007/s10967-013-2908-x},
url = {https://akademik.atauni.edu.tr/yayinlar/64944-fabrication-and-electrical-characterisation-of-the-tigatep-si-device-under-18}
}