Influence of 12 MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine
Özet
A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12 MeV electron irradiation with fluency of 3 x 10(12) e(-)/cm(2). It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12 MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation. (C) 2011 Elsevier Ltd. All rights reserved.
Anahtar kelimeler
Sürdürülebilir Kalkınma Amaçları
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SKA 7: Erişilebilir ve Temiz Enerji
Atıf için künye
Aydoğan, Ş., & TURUT, A. (2011). Influence of 12 MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine. RADIATION PHYSICS AND CHEMISTRY, 80(8), 869–875. https://doi.org/10.1016/j.radphyschem.2011.03.019
BibTeX
@article{aydogan2011-64919,
author = {Aydoğan, Şakir and TURUT, Abdulmecit},
title = {Influence of 12 MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine},
journal = {RADIATION PHYSICS AND CHEMISTRY},
year = {2011},
volume = {80},
number = {8},
pages = {869--875},
issn = {0969-806X},
doi = {10.1016/j.radphyschem.2011.03.019},
url = {https://akademik.atauni.edu.tr/yayinlar/64919-influence-of-12-mev-electron-irradiation-on-the-electrical-and-photovoltaic}
}