The electrical characteristics of the Fe3O4/Si junctions
Özet
The Fe3O4/Si junctions have been fabricated. The Fe3O4 NPs have been characterized by using TEM and XRD. Detailed study of the current-voltage (I-V) plots and capacitance-voltage measurements of the device (at f = 500 kHz) has been executed. The characteristic parameters of the structure such as ideality factor, barrier height, and series resistance have been calculated from the I-V measurements. The rectification ratio was determined to be similar to 3 x 10(4). The I-V characteristics clearly reveal the mechanism as ohmic at low voltage and that of trap-filled space charge limited current (SCLC) at higher voltage. The effect of X-ray irradiation on the junction characteristics has been studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of the irradiation dose. (C) 2012 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Çaldıran, Z., Deniz, A. R., Şahin, Y., Metin, O., Meral, K., & Aydoğan, Ş. (2013). The electrical characteristics of the Fe3O4/Si junctions. JOURNAL OF ALLOYS AND COMPOUNDS, 552, 437–442. https://doi.org/10.1016/j.jallcom.2012.11.079
BibTeX
@article{caldiran2013-64915,
author = {Çaldıran, Zakir and Deniz, Ali Rıza and Şahin, Yılmaz and Metin, Onder and Meral, Kadem and Aydoğan, Şakir},
title = {The electrical characteristics of the Fe3O4/Si junctions},
journal = {JOURNAL OF ALLOYS AND COMPOUNDS},
year = {2013},
volume = {552},
pages = {437--442},
issn = {0925-8388},
doi = {10.1016/j.jallcom.2012.11.079},
url = {https://akademik.atauni.edu.tr/yayinlar/64915-the-electrical-characteristics-of-the-fe3o4si-junctions}
}