High barrier Schottky diode with organic interlayer
Özet
A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitance-voltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current (I-sc) and open circuit voltage (V-oc) have been extracted as 0.33 mu A and 150 mV, respectively. (C) 2011 Elsevier Ltd. All rights reserved.
Anahtar kelimeler
Atıf için künye
Gullu, O., Aydoğan, Ş., & TURUT, A. (2012). High barrier Schottky diode with organic interlayer. Solid State Communications, 152(5), 381–385. https://doi.org/10.1016/j.ssc.2011.12.007
BibTeX
@article{gullu2012-64914,
author = {Gullu, O. and Aydoğan, Şakir and TURUT, Abdulmecit},
title = {High barrier Schottky diode with organic interlayer},
journal = {Solid State Communications},
year = {2012},
volume = {152},
number = {5},
pages = {381--385},
issn = {0038-1098},
doi = {10.1016/j.ssc.2011.12.007},
url = {https://akademik.atauni.edu.tr/yayinlar/64914-high-barrier-schottky-diode-with-organic-interlayer}
}