Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes
Özet
Mn-doped p-InSe semiconductor crystals were grown by Bridgman -Stockbarger technique. The crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fabricated Sn/InSe: Mn Schottky diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of diodes were investigated to determine the response of devices to electron irradiation with 9 MeV energy and 1.2x10(10) e-cm(-2) dose. After irradiation, the ideality factor and barrier height of the Sn/InSe: Mn Schottky diode were determined as 1.66 and 0.85 eV, respectively. Before irradiation, they were determined as 1.37 and 0.90 eV, respectively. It has been concluded that the radiation with high energy may contribute to form defects at the interface of the Sn/InSe:Mn device.
Anahtar kelimeler
Atıf için künye
DEMIR, K. C., TEKLE, T., Gürbulak, B., Aydoğan, Ş., Coskun, C., & Ekinci, D. (2016). Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes. Radiation Effects and Defects in Solids, 171, 528–543. https://doi.org/10.1080/10420150.2016.1217411
BibTeX
@article{demir2016-64904,
author = {DEMIR, K. Cinar and TEKLE, T. and Gürbulak, Bekir and Aydoğan, Şakir and Coskun, C. and Ekinci, Duygu},
title = {Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes},
journal = {Radiation Effects and Defects in Solids},
year = {2016},
volume = {171},
pages = {528--543},
issn = {1042-0150},
doi = {10.1080/10420150.2016.1217411},
url = {https://akademik.atauni.edu.tr/yayinlar/64904-growth-of-insemn-semiconductor-crystals-by-bridgman-stockbarger-technique-and}
}