Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
Özet
In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 mu A and 240 mV, respectively. (C) 2011 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Gullu, O., Aydoğan, Ş., & TURUT, A. (2012). Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer. Thin Solid Films, 520(6), 1944–1948. https://doi.org/10.1016/j.tsf.2011.09.043
BibTeX
@article{gullu2012-64892,
author = {Gullu, O. and Aydoğan, Şakir and TURUT, Abdulmecit},
title = {Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer},
journal = {Thin Solid Films},
year = {2012},
volume = {520},
number = {6},
pages = {1944--1948},
issn = {0040-6090},
doi = {10.1016/j.tsf.2011.09.043},
url = {https://akademik.atauni.edu.tr/yayinlar/64892-electronic-parameters-of-high-barrier-aurhodamine-101n-inp-schottky-diode-with}
}