Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application
Özet
n-ZnO film has been formed on p-Si substrate using sol-gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current-voltage (I-V) and capacitance-voltage (C-V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I-V curve, the ideality factor and barrier height (I broken vertical bar (b)) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (I broken vertical bar (b)) (C-V) has been found 0.86 eV, at 500 kHz frequency.
Atıf için künye
YILMAZ, M., CALDIRAN, Z., Deniz, A. R., Aydoğan, Ş., Gunturkun, R., & Turut, A. (2015). Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 119(2), 547–552. https://doi.org/10.1007/s00339-015-8987-5
BibTeX
@article{yilmaz2015-64890,
author = {YILMAZ, Mehmet and CALDIRAN, Z. and Deniz, A. R. and Aydoğan, Şakir and Gunturkun, R. and Turut, A.},
title = {Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application},
journal = {APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING},
year = {2015},
volume = {119},
number = {2},
pages = {547--552},
issn = {0947-8396},
doi = {10.1007/s00339-015-8987-5},
url = {https://akademik.atauni.edu.tr/yayinlar/64890-preparation-and-characterization-of-sol-gel-derived-n-zno-thin-film-for-schottky}
}