Fabrication and characteristics study of self-powered and UV-Vis-NIR photodetector based on p-NiO:Eu nanofibers

Heterojunctions formed between undoped and Eu-doped NiO nanofibers (NFs) and n-Si were fabricated by electrospinning the NiO:Eu NFs onto Si. Since the photoresponse of the Eu-doped NiO-containing device was better than the undoped one, the study focused on the doped NiO-containing device. This was explained by the increase in electron kinetics in terms of the active role of Eu in bonding with the 4f orbitals and the s, d, and f states of NiO. Electro-optical measurements of the NiO:Eu NFs/n-Si heterojunction were performed in the visible region depending on the light intensity and in the UV and NIR regions for 10 mW/cm(2) powers. It was observed that the device exhibits a good level of rectification properties and responds very well to all lights. At all three light sources, the heterojunction photodetector exhibited self-powered behavior. Furthermore, for 10 mW/cm(2) light intensity, the NiO:Eu NFs/n-Si photodetector achieved R values of 1.84 A/W at 365 nm, 0.98 A/W at 395 nm, and 1.54 A/W at 850 nm, while it is 0.12 A/W for visible light. Besides, the device showed an external quantum efficiency of 625% and this was attributed to the photocurrent gain. In self-driven mode, D* values have been determined as 3.0 x 10(12) Jones, 2.6 x 10(12) Jones, and 2.9 x 10(12) Jones for 365, 395, and 850 nm, respectively. The performance of NiO under UV light was attributed to the absorption of NiO under UV light, as well as the very good excitation of (Eu3+) ions by UV light.