The electrical and dielectric properties of the magnetite nanoparticles supported graphene-oxide/n-Si MOS type device that operates across a wide temperature range

In this paper, the Fe3O4 nanoparticles doped-GO film was coated on the Si wafer by spin coating method. SEM, TEM and EDX measurements were carried out for morphological and structural analysis of the nanoparticle doped GO film. The effect of temperature on the capacitance, conductance, series resistance and dielectric constants (the loss tan, the real and imaginary dielectric constants) of the CrIGOFe(3)O(4) NPs/n-Si sandwich device was investigated in wide temperature range 100-380 K for 500 kHz. It was observed that these parameters change with temperature and applied voltage. The C-V characteristics were analysed as a function of temperature. For 0.5 V, the plots of the conductance versus reciprocal temperature yield a sequence of two activation energies 25 meV (low temperature) and 138 meV (high temperature). However, at 1.0 V, it was determined an activation energy of 2.55 meV. The decrease in the barrier height with increasing temperature was associated with the change in the band gap with the temperature. Furthermore, the results showed that the Cr/GO-Fe3O4 M-Si device has the potential to be used in a wide temperature range for different electronic applications such as, thermal sensors, MOS, MOSFET and so on. (C) 2021 Elsevier B.V. All rights reserved.