Investigation of the switching phenomena in Ga2Te3 single crystals

Aydoğan, Şakir; Karacalı, Tevhit; YOGURTCU, YK

doi:10.1016/j.jcrysgro.2005.01.106

Makale Tam Makale Uluslararası 2005

Investigation of the switching phenomena in Ga2Te3 single crystals

Şakir Aydoğan, Tevhit Karacalı, YK YOGURTCU

JOURNAL OF CRYSTAL GROWTH Cilt 279 · ss. 110–113 · 15.05.2005

DOI ile aç

Özet

Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman-Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140-300 K). The current-voltage (I- V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model. (c) 2005 Elsevier B.V. All rights reserved.

Anahtar kelimeler

CRYSTAL-STRUCTURE Bridgman-Stockbarger crystal growth method single crystal growth Ga2Te3 single crystal semiconducting III-V compounds

Atıf için künye

Aydoğan, Ş., Karacalı, T., & YOGURTCU, Y. (2005). Investigation of the switching phenomena in Ga2Te3 single crystals. JOURNAL OF CRYSTAL GROWTH, 279, 110–113. https://doi.org/10.1016/j.jcrysgro.2005.01.106

BibTeX

@article{aydogan2005-64864,
  author = {Aydoğan, Şakir and Karacalı, Tevhit and YOGURTCU, YK},
  title = {Investigation of the switching phenomena in Ga2Te3 single crystals},
  journal = {JOURNAL OF CRYSTAL GROWTH},
  year = {2005},
  volume = {279},
  pages = {110--113},
  issn = {0022-0248},
  doi = {10.1016/j.jcrysgro.2005.01.106},
  url = {https://akademik.atauni.edu.tr/yayinlar/64864-investigation-of-the-switching-phenomena-in-ga2te3-single-crystals}
}