The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device
Özet
The effect of 12 MeV energy (3 x 10(12) e(-)/cm(2) fluency) electron irradiation on Au/Aniline Blue(AB)/n-Si/Al rectifying device has been studied in terms of the current-voltage (I-V), capacitance voltage (C-V), and capacitance-frequency (C-f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I-V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation. (C) 2011 Elsevier Masson SAS. All rights reserved.
Anahtar kelimeler
Atıf için künye
Aydoğan, Ş., Şerifoğlu, K., & Turut, A. (2011). The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device. SOLID STATE SCIENCES, 13, 1369–1374. https://doi.org/10.1016/j.solidstatesciences.2011.03.023
BibTeX
@article{aydogan2011-64855,
author = {Aydoğan, Şakir and Şerifoğlu, Korkmaz and Turut, Abdulmecit},
title = {The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device},
journal = {SOLID STATE SCIENCES},
year = {2011},
volume = {13},
pages = {1369--1374},
issn = {1293-2558},
doi = {10.1016/j.solidstatesciences.2011.03.023},
url = {https://akademik.atauni.edu.tr/yayinlar/64855-the-effect-of-electron-irradiation-on-the-electrical-characteristics-of-the}
}