Growth conditions effects on the H2 and CO2 gas sensing properties of Indium Tin Oxide

Indium Tin Oxide (ITO) thin films are transparent conducting wide bandgap oxide. In this study investigated optical, structural and morphological properties of sputtered ITO thin films using X-ray diffraction spectroscopy (XRD), Scanning electron microscopy (SEM), Energy Dispersive Spectroscopy (EDX) and optical absorption techniques. These measurements revealed that the oxygen gas percentage present in the ITO film deposited by RF magnetron sputter deposition showed systematic variation of its band gap, crystal orientation, growth rate, figure of merit (FOM) and dominant XRD peaks. All the thin films deposited at room temperature (RT). Once characterization of the films carried out, H-2 and CO2 resistive gas sensors fabricated by depositing the ITO film on top of aluminium interdigitated contacts/electrode (IDE), that fabricated following lithography and etching processes. These devices showed reasonable sensitivity for pure H-2 and CO2 at elevated temperature. A correlation found between the thin film properties of the ITO and its sensing capability for H-2 and CO2, which these gases are important in many fields such as automotive, energy, biological and health-related applications.