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Bildiri Tam Metin Bildiri Uluslararası 1992

PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY

Sebahattin Tüzemen, MR BROZEL

MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology ss. 99–105 · San Francisco · 15.05.1992–19.05.1992 · 15.05.1992

Atıf için künye

Tüzemen, S., & BROZEL, M. (1992). PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY. MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology, San Francisco (ss. 99–105).

BibTeX 
@inproceedings{tuzemen1992-64724,
  author = {Tüzemen, Sebahattin and BROZEL, MR},
  title = {PERSISTENT PHOTO HALL PHENOMENON AND NEAR BAND EDGE ABSORPTION IN LIGHTLY N TYPE LEC GAAS, MATERIALS RESEARCH SOCIETY},
  booktitle = {MATERIALS RESEARCH SOCIETY , Defect Engineering in Semiconductor Growth, Processing, and Device Technology},
  address = {San Francisco},
  year = {1992},
  pages = {99--105},
  url = {https://akademik.atauni.edu.tr/yayinlar/64724-persistent-photo-hall-phenomenon-and-near-band-edge-absorption-in-lightly-n-type}
}