Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction
Özet
n-ZnO film grown by electrodeposition (ECD) on p-GaAs substrate was characterized by structural, optical, and electrical techniques. X-ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong c-axis (0002) preferential orientation. Photoluminescence (PL) measurements showed that the grown film has a strong and narrow ultraviolet (UV) emission indicating high-quality ZnO thin film. Current voltage (I-V) measurement of n-ZnO/p-GaAs heterojunction shows diode-like rectifying characteristics with an almost five-order rectification factor and a turn-on voltage of 2 V. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Anahtar kelimeler
Atıf için künye
TEKMEN, S., GÜR, E., ASIL, H., Çınar Demir, K., COSKUN, C., & Tüzemen, S. (2010). Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(6), 1464–1467. https://doi.org/10.1002/pssa.200925488
BibTeX
@article{tekmen2010-64707,
author = {TEKMEN, Sueleyman and GÜR, Emre and ASIL, Hatice and Çınar Demir, Kübra and COSKUN, Cevdet and Tüzemen, Sebahattin},
title = {Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction},
journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
year = {2010},
volume = {207},
number = {6},
pages = {1464--1467},
issn = {1862-6300},
doi = {10.1002/pssa.200925488},
url = {https://akademik.atauni.edu.tr/yayinlar/64707-structural-optical-and-electrical-properties-of-n-znop-gaas-heterojunction}
}