ZnO homojunction white light-emitting diodes
Özet
p-Type-doped ZnO films were grown on nominally undoped n-ZnO, which is deposited on p-Si:B by electrochemical deposition. The electrical properties of individually doped ZnO:Na/Mg/Sb/Ti films were determined by means of the Hall system at the room temperature. Our results showed that doped ZnO films had high mobility ranging from 11 to 638 cm(2)/V s, carrier concentration ranging from 6.00 x 10(16) to 3.37 x 10(19) cm(-3), and low resistivity ranging from 1.62 x 10(-2) to 21.9 x 10(-2) Omega cm. Electroluminescence measurements of obtained homojunctions exhibited three main broad luminescence bands peaking at 2.8, 2.5, and 1.98 eV, respectively. In addition to these broadbands, Fabry-Perot oscillations were also observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627247]
Atıf için künye
BALTAKESMEZ, A., TEKMEN, S., & Tüzemen, S. (2011). ZnO homojunction white light-emitting diodes. JOURNAL OF APPLIED PHYSICS, 110(5). https://doi.org/10.1063/1.3627247
BibTeX
@article{baltakesmez2011-64702,
author = {BALTAKESMEZ, ALİ and TEKMEN, SÜLEYMAN and Tüzemen, Sebahattin},
title = {ZnO homojunction white light-emitting diodes},
journal = {JOURNAL OF APPLIED PHYSICS},
year = {2011},
volume = {110},
number = {5},
issn = {0021-8979},
doi = {10.1063/1.3627247},
url = {https://akademik.atauni.edu.tr/yayinlar/64702-zno-homojunction-white-light-emitting-diodes}
}