Characteristics of near-band-edge absorption processes in bulk GaAs
Özet
Some important characteristics of near band-edge absorption and photo-current were investigated in both n-type and semi-insulating GaAs. A remarkable absorption process peaking at 1.499meV (at 10K) with full-width at half-maximum of about 4meV was extracted from the absorption spectra of both materials. Parellel photo-current and absorption spectra extends from 1.495eV towards the band-edge at sample temperature of 10K. As the sample temperature is increased, this extension shifts towards the band-edge and disappears at just above 100K. Extrapolation of E-g-E-max versus temperature plots show that this absorption level becomes degenerate with the conduction band at sample temperature just above 200K. We propose that all the absorption is associated with ionization and that a model of photo-ionization of a deep level near the conduction band by an electron (or electrons) from the valance band may describe the observed phenomena. (C) 2004 Elsevier B.V. All rights reserved.
Atıf için künye
Tüzemen, S., & YILDIRIM, T. (2004). Characteristics of near-band-edge absorption processes in bulk GaAs. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 25(1), 55–63. https://doi.org/10.1016/j.physe.2004.06.042
BibTeX
@article{tuzemen2004-64700,
author = {Tüzemen, Sebahattin and YILDIRIM, T},
title = {Characteristics of near-band-edge absorption processes in bulk GaAs},
journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES},
year = {2004},
volume = {25},
number = {1},
pages = {55--63},
issn = {1386-9477},
doi = {10.1016/j.physe.2004.06.042},
url = {https://akademik.atauni.edu.tr/yayinlar/64700-characteristics-of-near-band-edge-absorption-processes-in-bulk-gaas}
}