RECOGNITION OF NONRADIATIVE RECOMBINATION CENTERS IN SEMIINSULATING GAAS
Özet
A novel technique, double-beam photoluminescence (DBPL), is introduced. This is used to investigate photoquenching effects of deep levels which affect near-band-edge photoluminescence (PL) in bulk-grown semi-insulating (SI) GaAs. We show that there is a remarkable increase in band-to-band radiative transition efficiency after photoquenching of near-band-edge absorption (also known as Reverse Contrast or RC) at low temperatures (less than 35 K) and associate this effect with a reduction in non-radiative recombination centres. We suggest that RC absorption does indeed map concentrations of the dominant recombination centre in SI GaAs and that the observed increase in luminescence after low-temperature illumination with light of near 1-mu-m wavelength is due to photoquenching of the RC defects.
Atıf için künye
Tüzemen, S., BREIVIK, L., & BROZEL, M. (1992). RECOGNITION OF NONRADIATIVE RECOMBINATION CENTERS IN SEMIINSULATING GAAS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 7. https://doi.org/10.1088/0268-1242/7/1a/007
BibTeX
@article{tuzemen1992-64698,
author = {Tüzemen, Sebahattin and BREIVIK, L and BROZEL, MR},
title = {RECOGNITION OF NONRADIATIVE RECOMBINATION CENTERS IN SEMIINSULATING GAAS},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = {1992},
volume = {7},
issn = {0268-1242},
doi = {10.1088/0268-1242/7/1a/007},
url = {https://akademik.atauni.edu.tr/yayinlar/64698-recognition-of-nonradiative-recombination-centers-in-semiinsulating-gaas}
}