Effect of non-stoichiometry on near-band-edge absorption and non- radiative recombination in bulk GaAs

Tüzemen, Sebahattin; Brozel, M.R.

doi:10.1016/0921-5107(92)90327-6

Makale Tam Makale Uluslararası 1992

Effect of non-stoichiometry on near-band-edge absorption and non- radiative recombination in bulk GaAs

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Cilt 14 · Sayı 1 · ss. 47–52 · 15.06.1992

DOI ile aç

Atıf için künye

Tüzemen, S., & Brozel, M. (1992). Effect of non-stoichiometry on near-band-edge absorption and non- radiative recombination in bulk GaAs. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 14(1), 47–52. https://doi.org/10.1016/0921-5107%2892%2990327-6

BibTeX

@article{tuzemen1992-64697,
  author = {Tüzemen, Sebahattin and Brozel, M.R.},
  title = {Effect of non-stoichiometry on near-band-edge absorption and non- radiative recombination in bulk GaAs},
  journal = {MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS},
  year = {1992},
  volume = {14},
  number = {1},
  pages = {47--52},
  issn = {0921-5107},
  doi = {10.1016/0921-5107(92)90327-6},
  url = {https://akademik.atauni.edu.tr/yayinlar/64697-effect-of-non-stoichiometry-on-near-band-edge-absorption-and-non-radiative}
}