Control of p- and n-type conductivity in sputter deposition of undoped ZnO
Özet
Recent theoretical studies have concluded that the low formation enthalpies of intrinsic donor defects should preclude achievement of p-type conductivity in undoped ZnO grown in thermal equilibrium with a molecular oxygen reservoir. This letter demonstrates that reactive sputtering can produce intrinsic p-type ZnO, controlled by adjusting the oxygen partial pressure in the sputtering plasma. We report the properties of p-n homojunctions fabricated in this way, and characterize transport in the films by Hall measurements. Our finding of p-type conductivity in undoped ZnO grown with dissociated oxygen is qualitatively consistent with the effect of higher chemical potential of atomic oxygen reactant on defect formation enthalpies. This parallels to some degree the recent attention to nitrogen acceptor incorporation by means of dissociating nitrogen source gases. (C) 2002 American Institute of Physics.
Atıf için künye
XİONG, G., WİLKİNSON, J., MİSCHUCK, B., Tüzemen, S., UCER, K., & WİLLİAMS, R. (2002). Control of p- and n-type conductivity in sputter deposition of undoped ZnO. APPLIED PHYSICS LETTERS, 80(7), 1195–1197. https://doi.org/10.1063/1.1449528
BibTeX
@article{xiong2002-64665,
author = {XİONG, GANG and WİLKİNSON, JOHN and MİSCHUCK, BRİAN and Tüzemen, Sebahattin and UCER, KB and WİLLİAMS, RT},
title = {Control of p- and n-type conductivity in sputter deposition of undoped ZnO},
journal = {APPLIED PHYSICS LETTERS},
year = {2002},
volume = {80},
number = {7},
pages = {1195--1197},
issn = {0003-6951},
doi = {10.1063/1.1449528},
url = {https://akademik.atauni.edu.tr/yayinlar/64665-control-of-p-and-n-type-conductivity-in-sputter-deposition-of-undoped-zno}
}