The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes
Özet
The effective barrier heights and ideality factors of identically fabricated Ni/n-type 6 H-SiC Schottky diodes (23 dots) have been calculated from their experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. A statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes has been made. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the I-V and C-V characteristics have differed from diode to diode. The BHs obtained from the I-V characteristics varied from 0.85 to 1.03 eV, the ideality factors varied from 1.13 to 1.40 and the BHs from C-2-V characteristics varied from 1.10 to 1.70 eV. The experimental BH and ideality factor distributions obtained from the I-V characteristics are fitted by a Gaussian function, and their mean values are found to be 0.92±0.04 eV and 1.29±0.08 eV, respectively. The lateral homogeneous SBH value of 1.16 eV for the Ni/n-type 6H-SiC diodes has been calculated from a linear extrapolation of the effective barrier heights to nif=1.03. © 2008 Springer-Verlag.
Atıf için künye
Gürbulak, B., Dogan, S., Tüzemen, S., & Tueruet, A. (2008). The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 91(2), 337–340. https://doi.org/10.1007/s00339-008-4411-8
BibTeX
@article{gurbulak2008-64661,
author = {Gürbulak, Bekir and Dogan, S. and Tüzemen, Sebahattin and Tueruet, A.},
title = {The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes},
journal = {APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING},
year = {2008},
volume = {91},
number = {2},
pages = {337--340},
issn = {0947-8396},
doi = {10.1007/s00339-008-4411-8},
url = {https://akademik.atauni.edu.tr/yayinlar/64661-the-barrier-height-inhomogeneity-in-identically-prepared-nin-type-6h-sic}
}