A UNIFORMITY INVESTIGATION OF UNDOPED, SEMIINSULATING GAAS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE

BREIVIK, L; BROZEL, MR; STIRLAND, DJ; Tüzemen, Sebahattin

doi:10.1088/0268-1242/7/1a/051

Makale Tam Makale Uluslararası 1992

A UNIFORMITY INVESTIGATION OF UNDOPED, SEMIINSULATING GAAS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE

L BREIVIK, MR BROZEL, DJ STIRLAND, Sebahattin Tüzemen

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Cilt 7 · 01.01.1992

DOI ile aç

Özet

We have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method.

Atıf için künye

BREIVIK, L., BROZEL, M., STIRLAND, D., & Tüzemen, S. (1992). A UNIFORMITY INVESTIGATION OF UNDOPED, SEMIINSULATING GAAS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 7. https://doi.org/10.1088/0268-1242/7/1a/051

BibTeX

@article{breivik1992-64657,
  author = {BREIVIK, L and BROZEL, MR and STIRLAND, DJ and Tüzemen, Sebahattin},
  title = {A UNIFORMITY INVESTIGATION OF UNDOPED, SEMIINSULATING GAAS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = {1992},
  volume = {7},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/7/1a/051},
  url = {https://akademik.atauni.edu.tr/yayinlar/64657-a-uniformity-investigation-of-undoped-semiinsulating-gaas-grown-by-the-vertical}
}