The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure
Özet
In this research, we have investigated the electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure before and after Co-60 gamma (gamma)-ray source irradiation with the total dose range of 0-500 kGy at room temperature. Electrical measurements of this structure have been performed using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Experimental results show that the values of the ideality factor obtained from I-V measurements increased and the values of the barrier height obtained from reverse-bias C-V measurements decreased after gamma-irradiation. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.
Atıf için künye
Salari, M. A., Güzeldir, B., & Sağlam, M. (2017). The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure. 33rd International Physics Congress of the Turkish-Physical-Society (TPS), Bodrum. https://doi.org/10.1063/1.5025974
BibTeX
@inproceedings{salari2017-64367,
author = {Salari, M. Abdolahpour and Güzeldir, Betül and Sağlam, Mustafa},
title = {The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure},
booktitle = {33rd International Physics Congress of the Turkish-Physical-Society (TPS)},
address = {Bodrum},
year = {2017},
doi = {10.1063/1.5025974},
url = {https://akademik.atauni.edu.tr/yayinlar/64367-the-effects-of-gamma-irradiation-on-electrical-characteristics-of-znznon-siau-sb}
}