Bildiri
Tam Metin Bildiri
Uluslararası
2018
CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS
2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY
28.08.2018–30.08.2018 · 28.08.2018
Atıf için künye
SALARİ, M. A., Merhan Muğlu, G., Güzeldir, B., & Sağlam, M. (2018). CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS. 2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY.
BibTeX
@inproceedings{salari2018-64310,
author = {SALARİ, Maryam Abdolahpour and Merhan Muğlu, Günay and Güzeldir, Betül and Sağlam, Mustafa},
title = {CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS},
booktitle = {2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY},
year = {2018},
url = {https://akademik.atauni.edu.tr/yayinlar/64310-calculation-of-some-parameters-of-the-zno-interfacial-znn-si-junction-depending}
}