Atatürk Üniversitesi Atatürk Üniversitesi
Ara
Yayınlara dön
Bildiri Özet Bildiri Uluslararası 2018

Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

Maryam Abdolahpour SALARİ, Yılmaz Şahin, Betül Güzeldir, Mustafa Sağlam

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY 28.08.2018–30.08.2018 · 28.08.2018

Atıf için künye

SALARİ, M. A., Şahin, Y., Güzeldir, B., & Sağlam, M. (2018). Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses. 2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY.

BibTeX
@inproceedings{salari2018-64298,
  author = {SALARİ, Maryam Abdolahpour and Şahin, Yılmaz and Güzeldir, Betül and Sağlam, Mustafa},
  title = {Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses},
  booktitle = {2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY},
  year = {2018},
  url = {https://akademik.atauni.edu.tr/yayinlar/64298-examination-of-characteristic-parameters-of-znn-si-junction-depending-on}
}