Bildiri
Özet Bildiri
Uluslararası
2019
Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature
4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019)
ss. 7 · Ağrı · 19.06.2019–22.06.2019 · 19.06.2019
Atıf için künye
Özakın, O., AYKAÇ, C., Güzeldir, B., & Sağlam, M. (2019). Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature. 4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı (ss. 7).
BibTeX
@inproceedings{ozakin2019-64290,
author = {Özakın, Oğuzhan and AYKAÇ, CENGİZ and Güzeldir, Betül and Sağlam, Mustafa},
title = {Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature},
booktitle = {4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019)},
address = {Ağrı},
year = {2019},
pages = {7},
url = {https://akademik.atauni.edu.tr/yayinlar/64290-characteristic-of-augraphenep-sial-schottky-diode-depend-on-annealing}
}