Bildiri
Tam Metin Bildiri
Uluslararası
2018
THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE
2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY
28.08.2018–30.08.2018 · 28.08.2018
Atıf için künye
CİMİLLİ ÇATIR, F. E., & Sağlam, M. (2018). THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE. 2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY.
BibTeX
@inproceedings{cimillicatir2018-64234,
author = {CİMİLLİ ÇATIR, FULYA ESRA and Sağlam, Mustafa},
title = {THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE},
booktitle = {2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY},
year = {2018},
url = {https://akademik.atauni.edu.tr/yayinlar/64234-the-effects-of-thermal-annealing-on-aln-inpin-schottky-barrier-height-as-a}
}