Makale
Tam Makale
Uluslararası
2019
Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature
International Journal of Scientific & Engineering Research
Cilt 10 · Sayı 9 · ss. 46–48 · 01.09.2019
Atıf için künye
Özakın, O., Bayram, Ö., AYKAÇ, C., Güzeldir, B., & Sağlam, M. (2019). Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature. International Journal of Scientific & Engineering Research, 10(9), 46–48.
BibTeX
@article{ozakin2019-64228,
author = {Özakın, Oğuzhan and Bayram, Özkan and AYKAÇ, CENGİZ and Güzeldir, Betül and Sağlam, Mustafa},
title = {Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature},
journal = {International Journal of Scientific & Engineering Research},
year = {2019},
volume = {10},
number = {9},
pages = {46--48},
url = {https://akademik.atauni.edu.tr/yayinlar/64228-electrical-characteristic-of-augraphenep-sial-schottky-diode-depend-on-annealing}
}