Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes
Özet
Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal-interfacial layer-semiconductor diodes with and without anodic surface passivation are investigated by the capacitancevoltage (C-V) and conductance-voltage (G/omega-V) characteristics. The measurements were performed at various voltages from -2 V to 2 V in the frequency range from 50 kHz to 1 MHz at room temperature and in the dark. The barrier height, concentration of acceptor atoms, and diffusion potential of these diodes were determined from the linear C-2-V plots. The barrier heights increase for the MS and MIS diodes with anodic surface passivation. Furthermore, the series resistance and interface state density of the diodes were obtained by the Hill-Coleman method and the Nicollian-Goetzberger method, respectively. It is found that the anodic passivation process has a positive effect on these parameters.
Anahtar kelimeler
Atıf için künye
Şenarslan, E., Güzeldir, B., & Sağlam, M. (2020). Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes. Journal of Physics and Chemistry of Solids, 146. https://doi.org/10.1016/j.jpcs.2020.109564
BibTeX
@article{senarslan2020-64223,
author = {Şenarslan, Elvan and Güzeldir, Betül and Sağlam, Mustafa},
title = {Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes},
journal = {Journal of Physics and Chemistry of Solids},
year = {2020},
volume = {146},
issn = {0022-3697},
doi = {10.1016/j.jpcs.2020.109564},
url = {https://akademik.atauni.edu.tr/yayinlar/64223-effects-of-surface-passivation-on-capacitance-voltage-and-conductance-voltage}
}