Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures
Özet
The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal. (c) 2007 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Aydoğan, Ş., Sağlam, M., & Tueruet, A. (2008). Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures. MICROELECTRONIC ENGINEERING, 85(2), 278–283. https://doi.org/10.1016/j.mee.2007.06.004
BibTeX
@article{aydogan2008-64214,
author = {Aydoğan, Şakir and Sağlam, Mustafa and Tueruet, A.},
title = {Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures},
journal = {MICROELECTRONIC ENGINEERING},
year = {2008},
volume = {85},
number = {2},
pages = {278--283},
issn = {0167-9317},
doi = {10.1016/j.mee.2007.06.004},
url = {https://akademik.atauni.edu.tr/yayinlar/64214-some-electrical-properties-of-polyanilinep-sial-structure-at-300-k-and-77-k}
}