On the some electrical properties of the non-ideal PPy/p-Si/Al structure
Özet
The electrical analysis of the PPy/p-Si structure has been investigated by means of I-V, C-V and C-f measurements. The diode ideality factor and the barrier height have been obtained to be n = 1.78 and Phi(b) = 0.69 eV by applying a thermionic emission theory, respectively. At high current densities in the forward direction, the series resistance effect has been observed. In general, the barrier height obtained from C-V data is greater than obtained from the I-V. This has been explained by introducing a spatial distribution of barrier heights (BHs) due to barrier height inhomogeneities that present at the PPy/p-Si interface. The C-f measurements of the structure have been performed at various biases and it has been seen that they have a good agreement between experimental and theoretical values. The interface state density N-ss and relaxation time T of the structure have been determined from the C-f characteristics. (c) 2005 Elsevier Ltd. All rights reserved.
Anahtar kelimeler
Atıf için künye
Aydoğan, Ş., Sağlam, M., & TURUT, A. (2005). On the some electrical properties of the non-ideal PPy/p-Si/Al structure. POLYMER, 46(24), 10982–10988. https://doi.org/10.1016/j.polymer.2005.09.038
BibTeX
@article{aydogan2005-64209,
author = {Aydoğan, Şakir and Sağlam, Mustafa and TURUT, Abdulmecit},
title = {On the some electrical properties of the non-ideal PPy/p-Si/Al structure},
journal = {POLYMER},
year = {2005},
volume = {46},
number = {24},
pages = {10982--10988},
issn = {0032-3861},
doi = {10.1016/j.polymer.2005.09.038},
url = {https://akademik.atauni.edu.tr/yayinlar/64209-on-the-some-electrical-properties-of-the-non-ideal-ppyp-sial-structure}
}