Conductance and series resistance measurements of polyaniline/p-Si and polypyrrole/InP junction devices
Özet
Polyaniline/p-Si/Al and polypyrrole/p-InP rectifying devices were fabricated. Electrochemical polymerization method has been used for obtaining the polymer films. Some electrical characteristics, such as current-voltage and conductance-voltage/frequency measurements were analyzed. From the I-V characteristics of the devices ideality factor and barrier height values were found as n = 2.12, Phi = 0.79 eV and n = 1.68, Phi = 0.59 eV for polyaniline/p-Si/Al and polypyrrole/p-InP devices respectively. Series resistance R-s calculations were performed as a function of temperature for polyaniline/p-Si/Al device. The values of R-s decreased with temperature for this device. The voltage and temperature dependence of R-s were attributed to the particular distribution density of interface states and interfacial insulator or polymer layer. The conductance-voltage and conductance-frequency characteristics of polypyrrole/p-InP device were investigated at room temperature. It has been seen that the effect of the series resistance is negligible for polypyrrole/p-InP device. (c) 2012 Elsevier B.V. All rights reserved.
Atıf için künye
Aydoğan, Ş., & Sağlam, M. (2012). Conductance and series resistance measurements of polyaniline/p-Si and polypyrrole/InP junction devices. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 46, 38–42. https://doi.org/10.1016/j.physe.2012.08.018
BibTeX
@article{aydogan2012-64199,
author = {Aydoğan, Şakir and Sağlam, Mustafa},
title = {Conductance and series resistance measurements of polyaniline/p-Si and polypyrrole/InP junction devices},
journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES},
year = {2012},
volume = {46},
pages = {38--42},
issn = {1386-9477},
doi = {10.1016/j.physe.2012.08.018},
url = {https://akademik.atauni.edu.tr/yayinlar/64199-conductance-and-series-resistance-measurements-of-polyanilinep-si-and}
}