Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes
Özet
We have identically prepared Au/n-InP/In Schottky barrier diodes (SBDs). The barrier height for the Au/n-InP/In SBDs from the current-voltage characteristics has varied from 0.557 eV to 0.615 eV, and the ideality factor n from 1.002 to 1.087. We have determined a lateral homogeneous barrier height value of approximately 0.597 eV for the Au/n-InP/In SBD from the experimental linear relationship between barrier heights and ideality factors. The barrier height value obtained from the reverse bias C-2-V characteristics has varied from 0.512 eV to 0.572 eV and statistical analysis yields the mean Phi(C-V) = 0.562 +/- 0.004 eV. A doping density of about (2.90 +/- 0.05) x 10(15) cm(-3) has been determined from the reverse bias C-2-V characteristics.
Atıf için künye
CİMİLLİ, F. E., Sağlam, M., & Tueruet, A. (2007). Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22(8), 851–854. https://doi.org/10.1088/0268-1242/22/8/003
BibTeX
@article{cimilli2007-64188,
author = {CİMİLLİ, Fulya Esra and Sağlam, Mustafa and Tueruet, A.},
title = {Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = {2007},
volume = {22},
number = {8},
pages = {851--854},
issn = {0268-1242},
doi = {10.1088/0268-1242/22/8/003},
url = {https://akademik.atauni.edu.tr/yayinlar/64188-determination-of-the-lateral-barrier-height-of-inhomogeneous-aun-type-inpin}
}